On functional diversity of localised interval-ley charge carrier transfer

Authors

  • S. A. Kostylev Onyx International Consulting, United States
  • S. A. Yatsunenko Institute of Physics, PAS, Poland
  • Z. L. Vintman RAMED, LLC, Ukraine
  • A. G. Yatsunenko RAMED, LLC, Ukraine

DOI:

https://doi.org/10.1109/ICATT.2013.6650812

Keywords:

multifunctional microwave devices, Gunn-effect devices, millimeter wave manipulation

Abstract

Possibilities of dramatic improvement in functionality by effects of bulk N-type Negative Differential Conductivity (N-NDC) in long inhomogeneous samples are described together with outstanding parameters of devices utilizing the effect.

References

YATSUNENKO, A.G.; ZABOLOTNY, P.I.; SABANSKY, A.N. Frequency shift mixer on Gunn diode with cathode static domain. Proc. of 10th Int. Microwave Crimean Conf., 2000, 127-130, doi: http://dx.doi.org/10.1109/CRMICO.2000.880150.

GRUBIN, H.L.; SHAW, M.P.; SOLOMON, P.R. On the Form and Stability of Electric-Field Profiles Within a Negative Differential Mobility Semiconductor. IEEE Trans. Electron Devices, 1973, v.20, n.1, p.63-78. doi: http://dx.doi.org/10.1109/T-ED.1973.17610.

BROVKIN, Y.N.; SHABALINA, R.G.; KOSTYLEV, S.A. Criteria of running domains nucleation in Gunn-diodes with contact imperfections and inhomogeneities. Sov. Phys. Semiconductors, 1975, n.9, p.697-701.

ICATT 2013 cover

Published

2014-02-19

Issue

2013: ICATT’2013 - Proc. of IX Int. Conf. on Antenna Theory and Techniques

Section

Microwave components and circuits, fiber-optic links